Equipment Type:

Cleanroom Instrumentation

Nano and Micro Fabrication

Plasma Etching and Material Growth

Information the Equipment Can Provide

The RIE-1C is a semi-automatic reactive ion etching system designed to etch dielectric, passivation, and semiconductor materials anisotropically. Etchable materials include: Silicon dioxide, silicon nitride, silicon oxy-nitride, silicon, poly-Si, polyimide, photoresist, and other polymeric films.

Characteristics:

• Reaction chamber: Quartz, 212 mm dia.
• Parallel plate design, cathode coupling RIE mode
• Distance between electrodes is fixed at 44 mm
• Upper electrode (140 mm dia.), lower electrode (180 mm dia.), support samples up to 6inch in dia
• Water cooled substrate
• RF power: 13.56 MHz, Max. 200W
• Chamber pressure control independent of the gas flow
• The system is pump using a dry pump
• Available gases:
  • CF4: 100 sccm
  • O2: 100 sccm
  • Ar: 100 sccm
  • SF6:100 sccm

Representative Etch Rates:

• Photoresist: 300nm/min (60W, 150mTorr, 30 sccm O2)

Fees and Policies

• UT Users: $31/hour
• Higher Education/State Agencies: $54/hour
• Corporate/External Users: $46/hour

To become a new user of this facility, please read the Instrument Reservation Information page. If you are already a user you can make a reservation in FBS.

To become a user of this instrument you must first complete the Cleanroom Safety Class. Please contact the facility manager to schedule a training session.