Instrument Capabilities
The Samco RIE-1C is a semi-automatic, capacitively coupled reactive ion etching (RIE) system designed for controlled anisotropic dry etching of dielectric, passivation, semiconductor, and polymer materials. The system is particularly useful for micro- and nanofabrication processes where directional etching and controlled pattern transfer are required. Etchable materials include: Silicon dioxide (SiO₂), Silicon nitride (Si₃N₄) , Silicon oxynitride (SiON), Silicon, Polycrystalline silicon (poly-Si), Polyimide, Photoresist, other polymeric films.
Key features:
- Reaction chamber: Quartz, 212 mm dia. Allowing for processing of substrates up to 6 inches in diameter
- Distance between electrodes is fixed at 44 mm
- Upper electrode (140 mm dia.), lower electrode (180 mm dia.), support samples up to 6inch in dia
- The system is pump using a dry pump
- Anisotropic plasma etching for micro- and nanofabrication
- Parallel-plate, capacitively coupled RIE configuration
- 13.56 MHz RF excitation with up to 200 W power
- Water-cooled substrate electrode for temperature control
- Process gases: CF₄, O₂, Ar, and SF₆, providing flexibility for oxide, silicon, polymer, and photoresist etching
- Semi-automatic operation for reproducible processing
Representative Etch Rates:
- Photoresist: 300nm/min (60W, 150mTorr, 30 sccm O2)
Fees and Policies
- UT Users: $35/hour
- Higher Education/State Agencies (Assisted): $92/hour
- Corporate/External Users (Assisted): $94/hour
- Higher Education/State Agencies (Unassisted): $64/hour
- Corporate/External Users (Unassisted): $65/hour
A cleanroom entry fee will be charged in addition to the cleanroom facility usage fee.
- UT Users $6
- Higher Education/State Agencies: $10
- Corporate/External Users: $10
Traning
Users should register for the required in-person training course through UTLearn.
