Instrument Capabilities
The Cambridge Nanotech Savannah TM200 is an atomic layer deposition (ALD) system designed to deposit thin, highly conformal films with precise thickness control. The system is well suited for applications including high-k dielectrics, passivation layers, barrier coatings, and transparent conductive oxides.
System Characteristics
- Deposition temperature: 100–250 °C (low- to mid-temperature range)
- Wafer capacity: Accommodates wafers up to 6 inches
- Carrier gas: N₂ (nitrogen)
Available Precursors
The following precursors are currently available for use in the system:
- Trimethylaluminum (TMA): Used for deposition of Al₂O₃ (aluminum oxide)
- Tetrakis(methylamino)hafnium (TDMAH): Used for deposition of HfO₂ (hafnium oxide)
- Water (H₂O): Used as the reactant/co-reactant for oxide deposition
Fees and Policies
Cleanroom Entry fee: (The cleanroom entry fee is charged in addition to the cleanroom facility usage fee)
- UT Users: $6
- Higher Education/State Agencies: $10
- Corporate/External Users: $10
Cleanroom Facility
- UT Users: $35/hour
- Higher Education/State Agencies (Assisted): $92/hour
- Corporate/External Users (Assisted): $94/hour
- Higher Education/State Agencies (Unassisted): $64/hour
- Corporate/External Users (Unassisted): $65/hour
Please contact Dr. Raluca Gearba and/or James Smitherman to schedule a training session.



