Instrument Capabilities
The Raith 150 TWO is an ultra-high resolution, low voltage (0.1 – 30 KeV) EBL tool. The tool is capable of writing sub-10 nm features, field stitching of ~ 25 nm, overlay alignment better than 40 nm, and can pattern structures over a 150 mm diameter wafer. Additionally, the system is also capable of fixed beam moving stage (FBMS) exposures, handling 7-inch masks, and automatic focus correction.
The patterning is controlled using the Raith Nanosuite software package. The software provides full control of the EBL system as well as integrating design files (GDSII, DXF or Raith native) for lithography. A second license is installed on a second computer in the cleanroom to support pattern design.
System performance
- Guaranteed minimum features less than 20 nm ( can easily get 12 nm)
- Demonstrated 8.2 nm feature size when using Hydrogen Silsesquioxane (HSQ) resist
- Stitching accuracy for a 100 µm write field: 11.9 nm
- Overlay accuracy for a 100 µm write field: 26.2 nm
Provided chemicals:
- Resist: PMMA 950 A4 (anisole 4%).
Fees and Policies
- UT Users: $60/hour
- Higher Education/State Agencies: $115/hour
- Corporate/External Users: $115/hour
Please contact Dr. Raluca Gearba and/or James Smitherman to schedule a training session.
